2N7000 Datasheet | NXP Semiconductors

FEATURES - Low RDS(on) - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 VARIANT handbook, halfpage QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 500 m A VGS = 10 V ID = 1 m A VGS = VDS CONDITIONS MAX. 60 280 5 3 UNIT V m A Ω V PIN CONFIGURATION d PIN 1 2 3 drain gate DESCRIPTION 1 2 3 g source MAM146 s Fig.1 Simplified outline and symbol. April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VDG ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain...