2N7002P
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- AEC-Q101 qualified
- Logic-level patible
- Trench MOSFET technology
- Very fast switching
1.3 Applications
- High-speed line driver
- Low-side loadswitch
- Relay driver
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 m A; Tj = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.01
[1]
Conditions Tamb = 25 °C
Min -20
- Typ 1
Max Unit 60 20 360 1.6 V V m A Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
60 V, 360 m A N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information...
