2N7002CK
description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features
I I I I Logic-level patible Very fast switching Trench MOSFET technology ESD protection up to 3 k V
1.3 Applications
I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-source on-state resistance single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 m A Conditions Min Typ 1.1 Max 60 300 1.2 1.6 Unit V m A A Ω
NXP Semiconductors
..
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 2
Simplified outline
Graphic symbol
017aaa000
3. Ordering information
Table 3. Ordering information Package Name 2N7002CK Description
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