2N7000G
Features
- AEC Qualified
- PPAP Capable
- This is a Pb- Free Device-
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain- Gate Voltage (RGS = 1.0 MW) Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 ms) Drain Current
- Continuous
- Pulsed
Total Power Dissipation Derate above 25°C
@
=
25°C
Symbol VDSS VDGR
VGS VGSM
ID IDM PD
Value 60 60
± 20 ± 40
200 500 350 2.8
Unit Vdc Vdc
Vdc Vpk m Adc m W m W/°C
Operating and Storage Temperature Range
TJ, Tstg
- 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction- to- Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds
Rq JA TL
357 °C/W 300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
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