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2N7000 - N-Channel MOSFET

General Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while providing rugged, reliable, and fast switching performance.

Key Features

  • High Density Cell Design for Low RDS(on).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV.
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S 123 TO.
  • 92 CASE 135AN 1 2 3 1.
  • Source 2.
  • Gate 3.
  • Drain TO.
  • 92 CASE 135AR.

📥 Download Datasheet

Datasheet Details

Part number 2N7000
Manufacturer onsemi
File Size 244.78 KB
Description N-Channel MOSFET
Datasheet download datasheet 2N7000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features  High Density Cell Design for Low RDS(on)  Voltage Controlled Small Signal Switch  Rugged and Reliable  High Saturation Current Capability  ESD Protection Level: HBM > 100 V, CDM > 2 kV  This Device is Pb−Free and Halogen Free DATA SHEET www.onsemi.