2N7000BU
Description
These N- channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on- state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 m A DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low- voltage, low- current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- Fast Switching Times
- Improved Inductive Ruggedness
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High- Temperature Reliability
- This is a Pb- Free Device
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDSS Drain- to- Source Voltage
Continuous Drain Current (TC = 25°C)
200 m A
Continuous Drain Current
(TC = 100°C)
IDM VGS TJ, TSTG
Drain Current Pulsed (Note 1)
Gate- to- Source Voltage
Operati...
