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PE60R900I - N-Channel MOSFET

Description

technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS @Tjmax RDS(ON). ID 650 900 5 V mΩ A.

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Datasheet Details

Part number PE60R900I
Manufacturer semi one
File Size 599.96 KB
Description N-Channel MOSFET
Datasheet download datasheet PE60R900I Datasheet

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Full PDF Text Transcription

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PE60R900I ，PE60R900K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS @Tjmax RDS(ON).
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