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PXFE181507FC - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

t frequency band.

Features

  • include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent u thermal performance and superior reliability PXFE181507FC Package H-37248G-4/2 d Single-carrier WCDMA Drive-up o VDD = 28 V, IDQ= 900 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, r 3.84 MHz BW p 24 60 Gain d 20 40 e 16 20 u Efficiency 12 0 tin 8 -20 PAR @ 0.01% CCDF n 4 -40 Features.

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Datasheet Details

Part number PXFE181507FC
Manufacturer Wolfspeed
File Size 1.24 MB
Description Thermally-Enhanced High Power RF LDMOS FET
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PXFE181507FC Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Description The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz t frequency band. Features include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent u thermal performance and superior reliability PXFE181507FC Package H-37248G-4/2 d Single-carrier WCDMA Drive-up o VDD = 28 V, IDQ= 900 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, r 3.84 MHz BW p 24 60 Gain d 20 40 e 16 20 u Efficiency 12 0 tin 8 -20 PAR @ 0.
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