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PXFC193808SV - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

  • include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package H-37275G-6/2 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 Gain 16 12 40 Efficiency 20 0 8 -20 4 PAR @ 0.01% CCDF.

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Datasheet Details

Part number PXFC193808SV
Manufacturer Infineon
File Size 190.68 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC193808SV Datasheet
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Full PDF Text Transcription

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PXFC193808SV Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz Description The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package H-37275G-6/2 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 Gain 16 12 40 Efficiency 20 0 8 -20 4 PAR @ 0.
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