Click to expand full text
PXFC211507SC
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz
Description
The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC211507SC Package H-37248G-4/2 (formed leads)
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V, IDQ = 960 mA, ƒ = 2115 MHz, 3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.
PXFC211507SC Datasheet
