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PXFC192207SH - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 22 56 21 Gain 48 20 40 19 32 18 24 17 16 16 Efficiency.

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Datasheet Details

Part number PXFC192207SH
Manufacturer Infineon
File Size 351.94 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207SH Datasheet
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Full PDF Text Transcription

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PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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