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PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC191507FC Package H-37248G-4/2
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
22
BW 3.
PXFC191507FC Datasheet
