Datasheet4U Logo Datasheet4U.com

PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

  • include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.84 MHz 30 60 d 1930 MHz 25 1960 MHz 50 e 1990 MHz u 20 40 Gain in.

📥 Download Datasheet

Datasheet preview – PXFC192207FH

Datasheet Details

Part number PXFC192207FH
Manufacturer Wolfspeed
File Size 746.31 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207FH Datasheet
Additional preview pages of the PXFC192207FH datasheet.

📁 Similar Datasheet

  • PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC192207NF - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC192207SH - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC191507FC - 150W High Power RF LDMOS FET (MACOM)
  • PXFC191507FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC193808SV - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC211507SC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXFC212551SC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PXF4333 - ABM 3G ATM Buf fer Manager (Infineon Technologies AG)
  • PXF4336 - ABM Premium ATM Buf fer Manager (Infineon Technologies AG)
Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.
Published: |