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PXFC191507FC - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.84 MHz 21 Gain 60 50 20 40 19 30 18 20 Efficiency 17 10 16 29 33 37 41 45 Output Power (dBm) c.

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Datasheet Details

Part number PXFC191507FC
Manufacturer Infineon
File Size 337.96 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC191507FC Datasheet
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Full PDF Text Transcription

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PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz Description The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.
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