Datasheet4U Logo Datasheet4U.com

PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 30 1930 MHz 25 1960 MHz 1990 MHz 20 Gain 15 60 50 40 30 10 20 5 0 30 10 Efficiency 35 40 45 c192207fh_g1 50 0 5.

📥 Download Datasheet

Datasheet preview – PXFC192207FH

Datasheet Details

Part number PXFC192207FH
Manufacturer Infineon
File Size 467.78 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207FH Datasheet
Additional preview pages of the PXFC192207FH datasheet.

📁 Similar Datasheet

  • PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PXFC191507FC - 150W High Power RF LDMOS FET (MACOM)
  • PXF4333 - ABM 3G ATM Buf fer Manager (Infineon Technologies AG)
  • PXF4336 - ABM Premium ATM Buf fer Manager (Infineon Technologies AG)
  • PXFE181507FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PXFE211507FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
Published: |