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WNMD2158 - Dual N-Channel MOSFET

General Description

The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2158 YYWW.

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Datasheet Details

Part number WNMD2158
Manufacturer Will Semiconductor
File Size 766.32 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2158 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2158 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS=2.5V ESD Rating: 2000V HBM WNMD2158 www.sh-willsemi.com Descriptions TSSOP-8L D1/D2 S2 S2 G2 8765 The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2158 is Pb-free.