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WNMD2160 - Dual N-Channel MOSFET

General Description

The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • SOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L.

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Datasheet Details

Part number WNMD2160
Manufacturer Will Semiconductor
File Size 454.60 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2160 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating: 2000V HBM WNMD2160 Http//:www.willsemi.com Descriptions The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2160 is Pb-free. Features SOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications z Driver for Relay, Solenoid, Motor, LED etc.