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WNMD2168 - Dual N-Channel MOSFET

General Description

The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2168 YYWW.

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Datasheet Details

Part number WNMD2168
Manufacturer Will Semiconductor
File Size 803.22 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2168 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2168 is Pb-free. WNMD2168 Http//:www.willsemi.com TSSOP-8L D1/D2 S2 S2 G2 8765 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2168 YYWW Applications  Driver for Relay, Solenoid, Motor, LED etc.