Datasheet4U Logo Datasheet4U.com

WNMD2162 - Dual N-Channel MOSFET

General Description

The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN2.9×2.8-8L.

📥 Download Datasheet

Datasheet Details

Part number WNMD2162
Manufacturer Will Semiconductor
File Size 1.21 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2162 Datasheet

Other Datasheets by Will Semiconductor

Part Number Description
WNMD2162A Dual N-Channel MOSFET
WNMD2160 Dual N-Channel MOSFET
WNMD2165 Dual N-Channel MOSFET
WNMD2166 Dual N-Channel MOSFET
WNMD2167 Dual N-Channel MOSFET
WNMD2168 Dual N-Channel MOSFET
WNMD2153 Dual N-Channel MOSFET
WNMD2154 Dual N-Channel MOSFET
WNMD2154A 20V 820mA Dual N-Channel Power MOSFET
WNMD2155 Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162 is Pb-free and Halogenfree . Http//:www.willsemi.com PDFN2.9×2.8-8L D2 D2 87 D1 6 D1 5 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L Applications  Driver for Relay, Solenoid, Motor, LED etc.