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WNMD2165 - Dual N-Channel MOSFET

General Description

The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-363.

📥 Download Datasheet

Datasheet Details

Part number WNMD2165
Manufacturer Will Semiconductor
File Size 1.70 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2165 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2165 is Pb-free and Halogen-free. WNMD2165 Http//:www.sh-willsemi.com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Features Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-363 Applications  Driver for Relay, Solenoid, Motor, LED etc.