WNMD2155 - Dual N-Channel MOSFET

Will Semiconductor

General Description

The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L.

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WNMD2155 dual n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNMD2155
Manufacturer	Will Semiconductor
File Size	383.36 KB
Description	Dual N-Channel MOSFET
Datasheet	WNMD2155 Datasheet

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Full PDF Text Transcription (Reference)

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WNMD2155 WNMD2155 Dual N-Channel, 20V, 7.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) (ȍ) 0.018@ VGS=10V 0.020@ VGS=4.5V 20 0.025@ VGS=2.5V 0.031@ VGS=1.8V Descriptions The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2155 is Pb-free. SOP-8L D1 D1 D2 8 76 D2 5 Features z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc.