WNMD2156 - Dual N-Channel MOSFET

Will Semiconductor

General Description

The WNMD2156 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L.

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WNMD2156 dual n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNMD2156
Manufacturer	Will Semiconductor
File Size	353.09 KB
Description	Dual N-Channel MOSFET
Datasheet	WNMD2156 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2156 Dual N-Channel, 20V, 6.5A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=10V 0.021@ VGS=4.5V 0.025@ VGS=2.5V 0.033@ VGS=1.8V Descriptions The WNMD2156 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2156 is Pb-free. WNMD2156 Http//:www.willsemi.com TSSOP-8L D1/D2 S2 S2 G2 8765 Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc.