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WNMD2157 - Dual N-Channel MOSFET

General Description

The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L.

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Datasheet Details

Part number WNMD2157
Manufacturer Will Semiconductor
File Size 203.02 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2157 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2157 Dual N-Channel, 20V, 5.4A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=4.5V 0.024@ VGS=2.5V 0.034@ VGS=1.8V WNMD2157 Http//:www.willsemi.com Descriptions Package The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2157 is Pb-free and Halogen-free.