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WNMD2176 - MOSFET

General Description

The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit.

Standard Product WNMD2176 is Pb-free.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23-6L.

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Datasheet Details

Part number WNMD2176
Manufacturer WillSEMI
File Size 675.62 KB
Description MOSFET
Datasheet download datasheet WNMD2176 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET WNMD2176 www.sh-willsemi.com VDS (V) Typical RDS(on) (mΩ) 20 56@ VGS=4.5V 76@ VGS=2.5V ESD Protected Descriptions The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product WNMD2176 is Pb-free.