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WNMD2078 - MOSFET

General Description

The WNMD2078 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-363.

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Datasheet Details

Part number WNMD2078
Manufacturer WillSEMI
File Size 894.44 KB
Description MOSFET
Datasheet download datasheet WNMD2078 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2078 WNMD2078 Dual N-Channel, 20V, 0.48A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.420@ VGS=4.5V 0.580@ VGS=2.5V 0.800@ VGS=1.8V ESD Protected Descriptions The WNMD2078 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2078 is Pb-free and Halogen-free. Features ● Trench Technology ● Supper high density cell design ● Excellent ON resistance for higher DC current ● Extremely Low Threshold Voltage ● Small package SOT-363 Applications ● Driver for Relay, Solenoid, Motor, LED etc. ● DC-DC converter circuit ● Power Switch ● Load Switch ● Charging Http//:www.willsemi.