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WNMD2153 - Dual N-Channel MOSFET

General Description

The WNMD2153 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WNMD2153 Http//:www. willsemi. com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 53.
  • 1 23 54 = Device Code.
  • = Month (A~Z) Marking.

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Datasheet Details

Part number WNMD2153
Manufacturer Will Semiconductor
File Size 262.36 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2153 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2153 Dual N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V Descriptions The WNMD2153 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNMD2153 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WNMD2153 Http//:www.willsemi.