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WNMD2166 - Dual N-Channel MOSFET

General Description

The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23-6L.

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Datasheet Details

Part number WNMD2166
Manufacturer Will Semiconductor
File Size 729.12 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2166 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V ID (A) 4.0 2.5 2.0 WNMD2166 Http//:www.willsemi.com Descriptions The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2166 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.