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SI3447BDV - P-Channel 12-V (D-S) MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET: 1.8 V Rated.
  • Ultra Low On-Resistance.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI3447BDV
Manufacturer Vishay Siliconix
File Size 75.73 KB
Description P-Channel 12-V (D-S) MOSFET
Datasheet download datasheet SI3447BDV Datasheet
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Full PDF Text Transcription

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P-Channel 12-V (D-S) MOSFET Si3447BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.040 at VGS = - 4.5 V 0.053 at VGS = - 2.5 V 0.072 at VGS = - 1.8 V ID (A) - 6.0 - 5.2 - 4.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Ultra Low On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch 3 mm TSOP-6 Top View 16 25 (4) S (3) G 34 2.
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