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P-Channel 2.5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = –4.5 V –20 0.090 @ VGS = –2.7 V
0.100 @ VGS = –2.5 V
ID (A)
"4.4 "3.7 "3.5
3 mm
TSOP-6 Top View 16 25
34
2.85 mm
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID
IDM IS PD TJ, Tstg
–20 "12 "4.4
"3.5 "20 –1.7 2.0 1.
SI3443DV Datasheet
