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SI3429EDV - MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg tested.
  • Built-in ESD protection - Typical ESD performance 3000 V.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI3429EDV
Manufacturer Vishay
File Size 246.04 KB
Description MOSFET
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Full PDF Text Transcription

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www.vishay.com Si3429EDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. 0.0210 at VGS = -4.5 V 0.0240 at VGS = -2.5 V 0.0380 at VGS = -1.8 V ID (A) a, e -8 -8 -8 Qg (TYP.) 43.2 nC TSOP-6 Single S 4 D 5 D 6 1 D Top View 2 D 3 G Marking Code: BM Ordering Information: Si3429EDV-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Built-in ESD protection - Typical ESD performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.
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