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Si3443DV - P-Channel MOSFET

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V • Fast switching speed. • Low gate charge (7.2nC typical). • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 D 2 G D SuperSOT TM-6 D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.

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Datasheet Details

Part number Si3443DV
Manufacturer ON Semiconductor
File Size 225.98 KB
Description P-Channel MOSFET
Datasheet download datasheet Si3443DV Datasheet
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    Si3443DV Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Applications • Load switch • Battery protection • Power management Features • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V • Fast switching speed. • Low gate charge (7.2nC typical). • High performance trench technology for extremely low RDS(ON).
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