SI3422DV
..
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200 r DS(on) (W)
5 @ VGS = 10 V
ID (A)
"0.42
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 m H TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 "0.42 "0.34
Steady State
Unit
"0.31 "0.25 "0.75 "0.75 0.028 "1 m J A 1.14 0.73
- 55 to 150 _C W A
2.1 1.34
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71098 S-99344- Rev. A,...
