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SI3420DV - N-Channel MOSFET

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Features

  • ID (A) 0.5.

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Datasheet Details

Part number SI3420DV
Manufacturer Vishay Siliconix
File Size 91.54 KB
Description N-Channel MOSFET
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www.DataSheet4U.com Si3420DV Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES ID (A) 0.5 PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 3.7 @ VGS = 10 V D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 0 1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 secs 200 "20 0.5 0.4 1 1 0.05 1 2.1 1.
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