SI3420DV
FEATURES
ID (A)
PRODUCT SUMMARY
VDS (V)
200 r DS(on) (W)
3.7 @ VGS = 10 V
D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 0 1 m H TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 0.5 0.4 1 1 0.05 1 2.1 1.34
Steady State
Unit
0.37 0.29 A m J A 1.14 0.73 W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71097 S-31725- Rev. B, 18-Aug-03...
