SI3424DV
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New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.028 @ VGS = 10 V 0.038 @ VGS = 4.5 V
ID (A)
6.7 5.7
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
30 "20 6.7
Steady State
Unit
5.0 4.0 30 A 1.0 1.14 0.73
- 55 to 150 W _C
ID IDM IS PD TJ, Tstg
1.7 2.0 1.3
THERMAL RESISTANCE RATINGS
Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71317 S-02157- Rev. A, 02-Oct-00 .vishay. Steady State Steady State Rth JA Rth...
