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SI3430DV - N-channel MOSFET

Datasheet Summary

Features

  • ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET.

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Datasheet Details

Part number SI3430DV
Manufacturer Vishay Siliconix
File Size 64.70 KB
Description N-channel MOSFET
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Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.
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