SI3430DV
FEATURES
ID (A)
2.4 2.3 r DS(on) (W)
0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V
D High-Efficiency PWM Optimized D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.1 0 1 m H TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IAR EAR IS PD TJ, Tstg
5 secs
100 "20 2.4 1.7 8 6 1.8 1.7 2.0 1.0
Steady State
Unit
1.8 1.3 A m J 1.0 1.14 0.59 A W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document...
