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Si3434DV
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.034 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V
ID (A)
6.1 5.0
D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area
APPLICATIONS
D Li-lon Battery Protection
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
2
5
3
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
30 "12 6.1
Steady State
Unit
V
4.
SI3434DV Datasheet
