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Si3435DV
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.036 @ VGS = - 4.5 V - 12 0.050 @ VGS = - 2.5 V 0.073 @ VGS = - 1.8 V
ID (A)
- 6.3 - 5.3 - 4.4
(4) S
TSOP-6 Top View
1 6 (3) G 3 mm 2 5
3
4 (1, 2, 5, 6) D P-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 4.6 IDM IS - 1.7 2.0 1.0 - 55 to 150 - 20 - 0.9 1.1 0.6 W _C - 3.4 A
Symbol
VDS VGS
5 secs
Steady State
- 12 "8
Unit
V
- 6.3
- 4.
SI3435DV Datasheet
