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P-Channel 1.8-V (G-S) MOSFET
Si3433BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = - 4.5 V
- 20 0.057 at VGS = - 2.5 V
0.080 at VGS = - 1.8 V
ID (A) - 5.6 - 4.8 - 4.1
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6 Top V iew
16
25
34
(4) S (3) G
2.85 mm
Ordering Information: Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
B3xxx
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
- 5.6 - 4.
Si3433BDV Datasheet
