SI3410DV
FEATURES
ID (A)a 8 8 Qg (Typ.) 9.2 n C
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Notebook Load Switch
- Low Current dc-to-dc
TSOP-6 Top View
D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AM XXX Lot Traceability and Date Code Part # Code 2.85 mm (4) Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G (3)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 8a 8a 7.5b,c 5.9b,c 30 2.7 1.7b,c 4.1 2.6 2b,c 1.25b,c
- 55 to 150 Unit V
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode...
