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SSM6K25FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K25FE
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V)
Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm 1.6±0.05 1.2±0.05
0.2±0.05
1
6
2
5
1.6±0.05 1.0±0.05 0.5 0.5
Characteristics
Symbol
Rating
Unit
3
4
0.12±0.05
0.55±0.05
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
± 12
V
Drain current
DC Pulse
Drain power dissipation
Channel temperature
ID
0.5
A
IDP
1.
SSM6K25FE Datasheet
