NTBG080N120SC1 - SiC MOSFET

Features

Typ. RDS(on) = 80 mW.
Ultra Low Gate Charge (Typ. QG(tot) = 56 nC).
Low Effective Output Capacitance (Typ. Coss = 79 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

Datasheet Details

Part number	NTBG080N120SC1
Manufacturer	ON Semiconductor
File Size	316.67 KB
Description	SiC MOSFET
Datasheet	NTBG080N120SC1 Datasheet
Additional preview pages of the NTBG080N120SC1 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200 V, M1, D2PAK-7L NTBG080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ.

Published: Aug 10, 2023 |