NTBG040N120SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 40 mW.
Ultra Low Gate Charge (Typ. QG(tot) = 106 nC).
Low Effective Output Capacitance (Typ. Coss = 139 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NTBG040N120SC1
Manufacturer	ON Semiconductor
File Size	325.92 KB
Description	SiC MOSFET
Datasheet	NTBG040N120SC1 Datasheet
Additional preview pages of the NTBG040N120SC1 datasheet.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB) NTBG040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ.

Published: Dec 19, 2023 |