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NTBG040N120M3S - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 40 mW @ VGS = 18 V.
Low Switching Losses.
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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NTBG040N120M3S SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG040N120M3S

Datasheet Details

Part number	NTBG040N120M3S
Manufacturer	ON Semiconductor
File Size	180.44 KB
Description	SiC MOSFET
Datasheet	NTBG040N120M3S Datasheet
Additional preview pages of the NTBG040N120M3S datasheet.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ.

Published: Oct 18, 2024 |