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NTBG014N120M3P - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 14 mW.
Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V).
100% Avalanche Tested Typical.

ON Semiconductor

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NTBG014N120M3P SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG014N120M3P

Datasheet Details

Part number	NTBG014N120M3P
Manufacturer	ON Semiconductor
File Size	325.34 KB
Description	SiC MOSFET
Datasheet	NTBG014N120M3P Datasheet
Additional preview pages of the NTBG014N120M3P datasheet.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ.

Published: Aug 19, 2023 |