NTB082N65S3F - N-Channel MOSFET

Datasheet Summary

Description

Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V Drain Source Voltage: VDSS= 650V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

Industrial power supplies UPS ABSOLUTE MAXIMUM RATINGS(T

INCHANGE

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Datasheet Details

Part number	NTB082N65S3F
Manufacturer	INCHANGE
File Size	228.89 KB
Description	N-Channel MOSFET
Datasheet	NTB082N65S3F Datasheet
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isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Industrial power supplies ·UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD Total Dissipation@TC=25℃ 320 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.

Published: Sep 4, 2020 |