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NTB125N02R, NTP125N02R
Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous
Operation
• Low Ciss to Minimize Driver Loss • Optimized Qgd and RDS(on) for Shoot−through Protection • Low Gate Charge • Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current −
Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp = 10 ms)
Thermal Resistance − Junction−to−Ambient (Note 1)
Total Power Dissipatio
NTB125N02R Datasheet
