NTBG020N090SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 20 mW @ VGS = 15 V.
Typ. RDS(on) = 16 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 200 nC).
Low Effective Output Capacitance (Coss = 295 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NTBG020N090SC1
Manufacturer	ON Semiconductor
File Size	319.51 KB
Description	SiC MOSFET
Datasheet	NTBG020N090SC1 Datasheet
Additional preview pages of the NTBG020N090SC1 datasheet.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VGS = 15 V • Typ.

Published: Apr 15, 2020 |