NTBG028N170M1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 28 mW.
Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
Low Effective Output Capacitance (typ. Coss = 200 pF).
100% Avalanche Tested.
RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	NTBG028N170M1
Manufacturer	ON Semiconductor
File Size	294.44 KB
Description	SiC MOSFET
Datasheet	NTBG028N170M1 Datasheet
Additional preview pages of the NTBG028N170M1 datasheet.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ.

Published: Jun 1, 2024 |