Datasheet4U Logo Datasheet4U.com

BLV935 - UHF power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.

The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap.

All leads are isolated from the flange.

Features

  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Internal input matching to achieve high power gain and easy design of wideband circuits.

📥 Download Datasheet

Datasheet preview – BLV935

Datasheet Details

Part number BLV935
Manufacturer NXP
File Size 85.54 KB
Description UHF power transistor
Datasheet download datasheet BLV935 Datasheet
Additional preview pages of the BLV935 datasheet.

📁 Similar Datasheet

  • BLV91 - UHF power transistor (Philips)
  • BLV91-SL - UHF power transistor (Philips)
  • BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)
  • BLV1N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV1N60A - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV297 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV2N60 - N-channel Enhancement Mode Power MOSFET (SHANGHAI BELLING)
  • BLV30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV31 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV32F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
Other Datasheets by NXP
  • BLV93 - UHF power transistor
  • BLV934 - UHF power transistor
  • BLV90 - UHF power transistor
  • BLV904 - UHF power transistor
  • BLV909 - UHF power transistor
  • BLV910 - UHF power transistor
  • BLV92 - UHF power transistor
  • BLV920 - UHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS • Base stations in the 820 to 980 MHz range. 1 3 2 4 BLV935 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange.
Published: |