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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV91/SL UHF power transistor
Product specification September 1988
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES
BLV91/SL
• diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base.
BLV91 Datasheet
